Microwave Characterization and Properties of 2μm Gate Length AlGaN/GaN HEMT Structures

Abstract

The paper reports the properties of AlGaN/GaN HEMT fabricated on sapphire substrate. Using 2 mum length of gate electrode 6.67 GHz transition frequency as well as 24.5 GHz maximum frequency of oscillation was achieved. Small-signal model was identified. The transistor transconductance is in the range of 170 mS/mm. However the transistor was intended for structure and technology verification, it could be used in RF circuits. To improve HEMT's microwave properties, gate length and source-drain distance shortening are in progress.