Monolithic power amplifiers covering 70-113 GHz

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) Pub Date : 2000-06-10 DOI:10.1109/RFIC.2000.854412

H. Wang, L. Samoska, T. Gaier, A. Peralta, H. Liao, Y.C. Chen, M. Nishimoto, R. Lai

引用次数: 16

Abstract

A number of monolithic W-band power amplifiers (PAs) have been developed for local oscillators of the Far Infrared and Submillimeter Telescope (FIRST). These PA chips include three driver and three power amplifiers covering most of the W-band, i.e., the frequency ranges of 72-81, 90-101, and 100-113 GHz. Each driver amplifier and power amplifier provides at least 20 and 22 dBm (160 mW), respectively in the frequency range it covers. The 100-113 GHz power amplifier has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic chips are fabricated using 0.1-/spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic T-gate power HEMTs on a 2-mil GaAs substrate.

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覆盖70-113 GHz的单片功率放大器

在远红外和亚毫米波望远镜(FIRST)的本振中，研制了许多单片w波段功率放大器(pa)。这些PA芯片包括三个驱动器和三个功率放大器，覆盖了大部分w频段，即72- 81,90 -101和100-113 GHz的频率范围。每个驱动放大器和功率放大器在其覆盖的频率范围内分别提供至少20和22 dBm (160 mW)。100-113 GHz功率放大器在105 GHz时的峰值功率大于250 mW (25 dBm)，这是迄今为止100 GHz以上单片放大器的最佳输出功率性能。这些单片芯片是在2 mil GaAs衬底上使用0.1-/spl μ m AlGaAs-InGaAs-GaAs伪晶t栅功率hemt制造的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)

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