A bandgap reference circuit with temperature compensation

Shuai Wang, J. Xing
{"title":"A bandgap reference circuit with temperature compensation","authors":"Shuai Wang, J. Xing","doi":"10.1109/ICASID.2010.5551833","DOIUrl":null,"url":null,"abstract":"A second-order compensated bandgap reference (BGR) using current proportional to absolute temperature (PTAT) is proposed in this paper. This proposed BGR utilize a PTAT current to improve the temperature coefficient (TC) of base-emitter voltage VBE, and make temperature characteristic of the BGR optimized. The simulation based on nee 2um BiCMOS process library shows a lower TC (only 9.07 ppm/°C) and a variation in the output voltage of the BGR less than 3.7mV with a power supply range from 3V to 10V.","PeriodicalId":391931,"journal":{"name":"2010 International Conference on Anti-Counterfeiting, Security and Identification","volume":"6 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Anti-Counterfeiting, Security and Identification","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASID.2010.5551833","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

A second-order compensated bandgap reference (BGR) using current proportional to absolute temperature (PTAT) is proposed in this paper. This proposed BGR utilize a PTAT current to improve the temperature coefficient (TC) of base-emitter voltage VBE, and make temperature characteristic of the BGR optimized. The simulation based on nee 2um BiCMOS process library shows a lower TC (only 9.07 ppm/°C) and a variation in the output voltage of the BGR less than 3.7mV with a power supply range from 3V to 10V.
带温度补偿的带隙参考电路
提出了一种基于电流与绝对温度成比例的二阶补偿带隙基准。该BGR利用PTAT电流提高基极-发射极电压VBE的温度系数,优化了BGR的温度特性。基于nee2um BiCMOS工艺库的仿真表明,在3V ~ 10V的供电范围内,BGR的TC较低(仅为9.07 ppm/°C),输出电压变化小于3.7mV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信