Scalability of Carbon Nanotube FET-based Circuits

Abstract

In this paper, we studied the scalability of CNT-based devices and circuits. We focused mainly on SB CNFETs and determined 1-1,5 nm to be an optimum tube diameter to achieve the best performance-power trade-off We established that CNTs have a potential in logic applications. We introduced FOA metric and showed improvement over Si-based MOSFETs and we extended our discussion toward scalability of CNFETs. CNTs are potentially a promising novel material to be integrated into future technology generations if research communities can collectively address some of the barriers and fabrication challenges this material system is facing.