Combined electronics and algorithm development for offset drift characterization in MEMS accelerometers

F. Maspero, V. F. López-Rey, L. Joet, S. Hentz, G. Langfelder
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引用次数: 4

Abstract

The work discusses methods for the characterization of the sensor-related offset drift component in MEMS capacitive accelerometers. It is shown how, even with discrete electronics, it is not trivial to isolate this contribution from electronic-related components, due to unavoidable electronics tolerances and drift. A method that involves the use of multiple (at least two), nominally identical boards, pre-characterized in terms of temperature drift, is shown to be effective in identifying sensor-related drift components with an accuracy as low as sub-50 μg/K. At the same time, the developed board reaches high-resolution performance, in order to clearly highlight the Brownian noise limit (40 μg/√Hz) in the tested consumer-grade accelerometers.
MEMS加速度计中偏移漂移特性的电子学与算法开发
本文讨论了MEMS电容式加速度计中传感器相关偏置漂移元件的表征方法。由于不可避免的电子公差和漂移,即使使用离散电子器件,将这种贡献从电子相关元件中隔离出来也不是微不足道的。一种涉及使用多个(至少两个)名义上相同的电路板,根据温度漂移预先表征的方法,被证明可以有效地识别传感器相关的漂移组件,精度低至低于50 μg/K。同时,开发的电路板达到了高分辨率性能,以便在测试的消费级加速度计中清晰地突出布朗噪声极限(40 μg/√Hz)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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