Technology for monolithic integration of GaInAs MSM photodetectors and AlGaAs/GaAs/AlGaAs-HEMT electronics

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493710

N. Bronner, W. Benz, T. Fink, N. Grun, M. Haupt, V. Hurm, K. Kohler, M. Ludwig

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Abstract

A process suitable for the monolithic integration of 1.3 /spl mu/m MSM photodiodes and HEMT electronics is presented A new MBE growth concept has been implemented to improve the performance of GaInAs photodetectors grown on GaAs. Photodetectors fabricated on linear and step graded buffer layers as well as those grown on InP substrates have been compared. The measured responsivities at the wavelength of 1.3 /spl mu/m were 0.34 A/W and 0.33 A/W for detectors on linear graded buffers and on InP, respectively. A -3 dB bandwidth of more than 8 GHz was obtained from high frequency measurements, The spectral response of the photodetectors show nearly the same responsivity for a wavelength of 1.3 /spl mu/m as for 1.55 /spl mu/m. Taking into account the high yield and reliability of our HEMT process the presented integration concept together with the new detector structure is suitable for large scale production of high performance long wavelength photoreceivers.

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GaInAs MSM光电探测器和AlGaAs/GaAs/AlGaAs- hemt电子器件的单片集成技术

提出了一种适合1.3 /spl mu/m MSM光电二极管与HEMT电子器件单片集成的工艺。为了提高在GaAs上生长的GaInAs光电探测器的性能，提出了一种新的MBE生长概念。比较了在线性和阶梯渐变缓冲层上制备的光电探测器以及在InP衬底上生长的光电探测器。在1.3 /spl mu/m波长下，线性梯度缓冲层和InP上的探测器的响应率分别为0.34 A/W和0.33 A/W。在波长为1.3 /spl mu/m和1.55 /spl mu/m时，光电探测器的光谱响应几乎相同。考虑到我们的HEMT工艺的高产率和可靠性，提出的集成概念以及新的探测器结构适合大规模生产高性能长波光电接收器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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