{"title":"A novel variable-gain amplifier based on an FGMOS transistor","authors":"S. Sharroush","doi":"10.1109/ICEDSA.2016.7818524","DOIUrl":null,"url":null,"abstract":"In radio-frequency receivers, variable-gain amplifiers (VGAs) are often used in order to compensate for the change of the signal level during the channel transmission and to relax the constraints on the succeeding analog-to-digital converter (ADC). In this paper, a novel VGA is introduced using a floating-gate MOS transistor (FGMOS). The voltage gain, the linearity, the valid region for proper operation, and the sensitivity are discussed and quantitative expressions are derived for them. The performance of this amplifier is verified by simulation adopting the 45 nm CMOS technology with Vdd = 1 V.","PeriodicalId":247318,"journal":{"name":"2016 5th International Conference on Electronic Devices, Systems and Applications (ICEDSA)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Conference on Electronic Devices, Systems and Applications (ICEDSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEDSA.2016.7818524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
In radio-frequency receivers, variable-gain amplifiers (VGAs) are often used in order to compensate for the change of the signal level during the channel transmission and to relax the constraints on the succeeding analog-to-digital converter (ADC). In this paper, a novel VGA is introduced using a floating-gate MOS transistor (FGMOS). The voltage gain, the linearity, the valid region for proper operation, and the sensitivity are discussed and quantitative expressions are derived for them. The performance of this amplifier is verified by simulation adopting the 45 nm CMOS technology with Vdd = 1 V.