Analytical formulation of graphene nanoribbon varactor diode

Abstract

Graphene nanoribbons (GNRs) are now top of the topics in nanoscale based research work. It is because the electronic device made by GNR can be integrated in larger amount on a single chip. Also because of their high mobility of carrier and higher variation of Fermi energy in response to gate voltage GNR is an extraordinary unique material in designing varactor diode. In this paper we will observe the width of GNR and bandgap energy. Then we will observe the insulator capacitance, quantum capacitance as well as gate capacitance for varying the different finger of GNR which are different in width. Then we will observe the quality factor for different width of finger of varactor diode which is made by GNR in response to their gate voltage.