A tunable X-band SiGe HBT single stage cascode LNA

Abstract

This pape r pre sents an X-band silic on-germanium (SiGe) single stage cascode tunable low-noise amplifier (LNA) for active phased arra y transm it/receive m odules. LNA is implemented by using IHP SiGe he terojunction bipolar transistors (HBTs) 0.25-μm SGB25V technology. Cadence is used in c ollaboration with ADS during sc hematic and lay out de sign and the r esults de pict that de signed LNA dissipates 15.36 mW from an 2. 4 V DC power supply and the maximum gain aroun d 18 dB in X-band while not exceeding the 2.4 dB noise figure (NF). Reverse gain of the LNA is very low (<−40 dB). Input terminal is matched so that S11 is below −10 dB in X-band.