Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions

Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242) Pub Date : 1998-10-12 DOI:10.1109/IAS.1998.730242

Chih-Chieh Shen, A.R. Kefner, D. Berning, J. Bernstein

引用次数: 53

Abstract

The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse bias safe operating area (RBSOA) test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single and multiple filament formation is presented and supported with both measurements and simulations.

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无箝位电感负载条件下IGBT关断失效动力学

采用仿真和测量的方法研究了绝缘栅双极晶体管(IGBT)在非箝位电感开关(UIS)条件下的内部失效动力学。美国的测量是使用一种独特的、自动化的、无损的反向偏置安全操作区域(RBSOA)测试系统进行的。采用先进的IGBT电路模拟器模型进行了模拟，以预测失效的机制和条件。结果表明，IGBT温度和关断电流不同，UIS失效的条件和关断时阳极电压雪崩持续波形的形状也不同。单丝和多丝形成的证据提出和支持的测量和模拟。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242)

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