{"title":"On-Chip Integrated Antennas for 200 GHz Applications","authors":"M. Jenning, B. Klein, R. Hahnel, D. Plettemeier","doi":"10.1109/ICUWB.2015.7324488","DOIUrl":null,"url":null,"abstract":"This paper presents four different on-chip antenna elements. They are two bow-tie antennas, one slotted and one fractal version, a half cloverleaf antenna and a stacked Vivaldi antenna. All antenna elements are designed for an operational frequency of 200 GHz for wireless computer board-to-board and chip-to-chip communication. The antenna elements were successfully designed and fabricated in a 130 nm SiGe semiconductor technology. After fabrication, S-parameter and radiation characteristics measurements were conducted on a wafer probe station. The results presented show good agreement with the simulated designs. The gain of the antenna elements is above 0 dBi and all elements achieve a bandwidth larger than 10 GHz.","PeriodicalId":339208,"journal":{"name":"2015 IEEE International Conference on Ubiquitous Wireless Broadband (ICUWB)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Conference on Ubiquitous Wireless Broadband (ICUWB)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICUWB.2015.7324488","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
This paper presents four different on-chip antenna elements. They are two bow-tie antennas, one slotted and one fractal version, a half cloverleaf antenna and a stacked Vivaldi antenna. All antenna elements are designed for an operational frequency of 200 GHz for wireless computer board-to-board and chip-to-chip communication. The antenna elements were successfully designed and fabricated in a 130 nm SiGe semiconductor technology. After fabrication, S-parameter and radiation characteristics measurements were conducted on a wafer probe station. The results presented show good agreement with the simulated designs. The gain of the antenna elements is above 0 dBi and all elements achieve a bandwidth larger than 10 GHz.