Vibrating body transistors: Enabling Fin-FET nano-electro-mechanical resonators

Abstract

This paper reports advances in the field of vibrating body transistors (VBTs) made on silicon-on-insulator substrates, compatible with CMOS. We review various vibrating transistor principles and present new results on scaled vibrating body FETs, resulting in resonant body Fin-FET architectures with two lateral air-gaps, showing resonance frequencies from 10MHz to 150MHz. These devices are expected to enable novel radio-frequency and sensing performance by their co-integration and co-design with CMOS.