High-Q MEMS-tunable waveguide filters in K-band

L. Pelliccia, F. Cacciamani, R. Sorrentino, P. Farinelli, P. Ligander, O. Persson
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引用次数: 12

Abstract

This paper presents the first experimental results of innovative MEMS-tunable waveguide filters showing very high Q (>;1000) in K-band. Ohmic RF-MEMS cantilever switches are used to connect printed line sections placed over the side wall of a TE101 mode cavity so realising an equivalent movable inner wall. The effective width of the cavity, thus its resonant frequency, can so be changed by activating the MEMS switches. Such a configuration is shown to yield a frequency tuning range up to 3% with unloaded Qs of the order of 1000 and negligible bandwidth variations (<; 10%). Measurements of a 23 GHz cavity show 730 MHz frequency shift (3.1%) with Qs of 750 and 1450 depending on the MEMS state. K-band 4th order filters have also been designed and fabricated. The experimental results are very promising both in terms of IL (i.e. unloaded Q) and robustness of the filter response after tuning.
k波段高q mems可调谐波导滤波器
本文介绍了创新的mems可调谐波导滤波器在k波段显示非常高的Q(>;1000)的实验结果。欧姆RF-MEMS悬臂开关用于连接放置在TE101模腔侧壁上的印刷线段,从而实现等效的可移动内壁。通过激活MEMS开关,可以改变谐振腔的有效宽度,从而改变谐振频率。这样的配置可以产生高达3%的频率调谐范围,卸载Qs的数量级为1000,带宽变化可以忽略不计(<;10%)。23 GHz腔的测量显示730mhz的频移(3.1%),Qs分别为750和1450,具体取决于MEMS状态。设计并制作了k波段4阶滤波器。实验结果在IL(即卸载Q)和调谐后滤波器响应的鲁棒性方面都非常有希望。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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