Trial fabrication of PTFE-based E-plane waveguide coupler for short millimeter-wave by SR etching

M. Kishihara, M. Murakami, A. Yamaguchi, Y. Utsumi, I. Ohta
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Abstract

It has been reported that the SR (synchrotron radiation) etching process is useful to construct PTFE-based microstructures. This paper treats a trial fabrication of the PTFE-based E-plane waveguide coupler for short millimeter-wave based on the SR etching process of PTFE, with the aim of developing integrated waveguide circuits. First, a cavity-type 3-dB directional coupler is designed at 180 GHz. In this paper, an integrated PTFE pattern, in which the two 3-dB couplers and the matching section are cascaded, is fabricated. Then, the frequency characteristics of the PTFE-based E-plane waveguide coupler are measured, and the validity of the fabrication process is verified.
用SR刻蚀法制备短毫米波ptfe基e平面波导耦合器
已有报道称,同步辐射刻蚀工艺可用于构建ptfe基微结构。本文以开发集成波导电路为目的,基于聚四氟乙烯的SR刻蚀工艺,尝试制作了一种基于聚四氟乙烯的短毫米波e平面波导耦合器。首先,设计了一个180 GHz的腔型3db定向耦合器。本文制作了一个集成的聚四氟乙烯模式,其中两个3db耦合器和匹配部分级联。然后,测量了基于ptfe的e平面波导耦合器的频率特性,验证了制作工艺的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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