LTspice Simulation Analysis for Loss Estimation of GaN MOSFET based Class E Resonant Inverter

Abstract

The class E resonant inverter is generally used in numerous applications where low power as well as high frequency is needed. The losses of class E resonant inverters are estimated in this work by considering silicon (Si) and gallium nitride (GaN) MOSFETs. Further, the function of a class E inverter, analytical steady-state analysis, and modelling of power losses are demonstrated. Moreover, a comparative analysis of class E resonant inverter using Si and GaN MOSFETs is presented considering the higher operating frequency and a compromise between the device voltage and current stresses. The simulation analysis is done with the help of LTspice to validate the theoretical analysis. It is observed that using GaN MOSFET based class E resonant inverter is capable to reduce the losses by 5–6 % (approx.) compared with the Si MOSFET based class E inverter.