A 500 nA quiescent, 100 mA maximum load CMOS low-dropout regulator

John Hu, Brian Hu, Yanli Fan, M. Ismail
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引用次数: 16

Abstract

Ultra low quiescent, wide output current range low-dropout regulators (LDO) are in high demand in portable applications to extend battery lives. This paper presents a 500 nA quiescent, 0 to 100 mA load, 3.5–7 V input to 3 V output LDO in a digital 0.35 μm 2P3M CMOS technology. The challenges in designing with nano-ampere of quiescent current are discussed, namely the leakage, the parasitics, and the excessive DC gain. CMOS super source follower voltage buffer and input excessive gain reduction are then proposed. The LDO is internally compensated using Ahuja method with a minimum phase margin of 55° across all load conditions. The maximum transient voltage variation is less than 150 and 75 mV when used with 1 and 10 μF external capacitor. Compared with existing work, this LDO achieves the best transient flgure-of-merit with close to best dynamic current efficiency (maximum-to-quiescent current ratio).
一个500 nA静态,100 mA最大负载CMOS低压差稳压器
超低静息,宽输出电流范围低压差稳压器(LDO)在便携式应用中有很高的需求,以延长电池寿命。本文提出了一种采用数字0.35 μm 2P3M CMOS技术的500 nA静态、0 ~ 100 mA负载、3.5 ~ 7 V输入到3 V输出的LDO。讨论了纳米安培静态电流设计中存在的问题,即漏电流、寄生电流和过大的直流增益。然后提出了CMOS超源从动器电压缓冲和输入过增益抑制。LDO采用Ahuja方法进行内部补偿,在所有负载条件下最小相位裕度为55°。使用1 μF和10 μF的外置电容时,瞬时电压的最大变化分别小于150和75 mV。与现有工作相比,该LDO在接近最佳动态电流效率(最大与静态电流比)的情况下实现了最佳暂态性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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