All MOS transistors bandgap reference using chopper stabilization technique

H. Roh, J. Roh, Q. Z. D. Duanquanzhen
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引用次数: 9

Abstract

A 0.6-V, 8-μW bandgap reference without BJTs is realized in the standard CMOS 0.13μm technology. All MOS transistors bandgap reference circuit with very low supply voltage 0.6V is designed. The chopper stabilization technique is used to improve the accuracy of the bandgap reference voltage. The measurement results have confirmed that the chopper stabilization technique reduces bandgap voltage error from 100mV to 30mV comparing to the one without chopper stabilization technique.
所有MOS晶体管带隙参考采用斩波稳定化技术
采用标准CMOS 0.13μm工艺,实现了无bjt的0.6 v、8 μ w带隙基准电路。设计了全MOS晶体管带隙参考电路,电源电压极低,为0.6V。采用斩波稳定技术提高了带隙参考电压的精度。测量结果证实,与不采用斩波稳定技术相比,采用斩波稳定技术后带隙电压误差从100mV减小到30mV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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