CMOS compatible TE-pass polarizer based on SOI platform

Abstract

In this paper, a compact TE pass polarizer based on silicon-on-insulator (SOI) is reported and analyzed. The suggested design depends on asymmetric silicon coupler to separate the two polarizing states and hence the required polarizing state can be obtained. The proposed SOI TE polarizer can achieve -16.15 dB extinction ratio and -0.67 dB insertion losses with compact device length of 4.5 μm. Further, the introduced device is easy for fabrication and is compatible with standard CMOS fabrication process.