CGS(D)/CS(D)GCapacitance Phenomenon of 100nm Fully-Depleted SOI CMOS Devices with HfO2High-K Gate Dielectric Considering Vertical and Fringing Displacement Effects
{"title":"CGS(D)/CS(D)GCapacitance Phenomenon of 100nm Fully-Depleted SOI CMOS Devices with HfO2High-K Gate Dielectric Considering Vertical and Fringing Displacement Effects","authors":"Yu-Sheng Lin, Chia‐Hong Lin, J. Kuo, K. Su","doi":"10.1109/EDSSC.2005.1635214","DOIUrl":null,"url":null,"abstract":"This paper reports the C<inf>GS(D)</inf>/C<inf>S(D)G</inf>capacitance phenomenon of 100nm fully-depleted (FD) SOI CMOS devices with HfO<inf>2</inf>high-k gate dielectric considering vertical and fringing displacement effect. According to the 2D simulation results, a unique two-step C<inf>S(D)G</inf>/C<inf>GS</inf>versus V<inf>G</inf>curve exists for the device with the 1.5nm HfO<inf>2</inf>gate dielectric due to the vertical and fringing displacement effects.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635214","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper reports the CGS(D)/CS(D)Gcapacitance phenomenon of 100nm fully-depleted (FD) SOI CMOS devices with HfO2high-k gate dielectric considering vertical and fringing displacement effect. According to the 2D simulation results, a unique two-step CS(D)G/CGSversus VGcurve exists for the device with the 1.5nm HfO2gate dielectric due to the vertical and fringing displacement effects.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
