Approach for developing a large signal model of a 150 GHz HEMT

Abstract

In this contribution the development of a large signal model describing the electrical behaviour of an InAlAs/InGaAs/InP-HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T-gate of 0.25 /spl mu/m footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP-MDS or Spice. The procedure results in an easily applicable model which produces very good fits to the measured S-parameters.