Wide-Band Gunn Diodes Based on Graded-Gap InGaP/ InP As

Abstract

The paper presents the results of numerical experiments on the oscillation generation using the n⁺-n-n⁺ transfer electron device based on InGaP/lnPAs graded-gap semiconductor compounds at different Ga and As distributions. The active region of the diode is 2.5 µm with an ionized impurity concentration of 10¹⁶ cm⁻³. It is paper shown that the output power and the efficiency of Gunn generators increase several times when the InGaP/lnPAs graded-gap semiconductors are used. The reasons for this increase are considered. The highest power of 11.3 kW/cm² with efficiency of 10.2% at frequency of 40 GHz belong to In0.4Ga0.6P/lnP0.4As0.6diode.