Structural Properties of CdS Thin-films Deposited by RF Magnetron Sputtering

E. Ahamed, A. Gupta, M. Khan, M. Matin, N. Amin
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Abstract

Cadmium Sulfide (CdS) thin-films were deposited by RF magnetron sputtering at different RF power ambient and their structural properties were studied to observe the effect of different sputtering conditions on the structural properties of CdS films. CdS is widely used buffer layer for chalcopyrite based photovoltaic cells and requires good crystalline property and less dislocation density as well as strain in conjunction with a thinner layer ensures good crystalline quality. The as deposited films were characterized by X-ray diffraction and the structural properties (crystal type, lattice alignment, lattice constant, crystalline size, microstrain, dislocation density, etc.) were analyzed. Analysis on structural properties shows that crystallite size increases and crystalline quality enhanced with higher RF power, while the dislocation density and developed strain declined for the same conditions. This investigation concluded that higher RF power sputtered CdS thin-films for lower time deposition can be more suitable for thin-film photovoltaic cell applications.
射频磁控溅射沉积CdS薄膜的结构特性
采用射频磁控溅射技术在不同的射频功率环境下沉积硫化镉薄膜,并对其结构性能进行研究,观察不同溅射条件对硫化镉薄膜结构性能的影响。CdS是目前广泛应用于黄铜矿基光伏电池的缓冲层,其晶体性能好,位错密度小,应变小,层越薄,晶体质量越好。采用x射线衍射对薄膜进行了表征,分析了薄膜的结构特性(晶体类型、晶格取向、晶格常数、晶体尺寸、微应变、位错密度等)。结构性能分析表明,随着射频功率的增加,晶体尺寸增大,晶体质量增强,而在相同条件下,位错密度和发育应变减小。研究结果表明,较高的射频功率溅射CdS薄膜可以较短的时间沉积,更适合于薄膜光伏电池的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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