Experimental investigation of SEUs Induced by Heavy Ions in 28-nm FDSOI SRAMs

Abstract

We have performed an irradiation test of heavy ions on 28-nm fully-depleted silicon-on-insulator (FDSOI) SRAMs. Linear energy transfer (LET), temperature, supply voltage and body bias dependence of single event upset (SEU) cross section in 28-nm FDSOI SRAMs is investigated. The experimental results show that as the LET increases, the SEU cross section increases, and there is no multiple cell upset (MCU). The LET threshold is less than 3.3 MeV-cm2/mg. The SEU is not sensitive to temperature under the 28-nm FDSOI process. Besides, the SEU resistance is better at high temperatures than at normal temperature. The influence of the supply voltage on the SEU cross section is uncertain. The best SEU resistance under the heavy ion striking is in the zero-bias state.