Modeling Techniques for GaN FinFET

Abstract

This paper briefly introduces the fabrication of GaN FinFET devices and its DC and microwave characteristics. GaN FinFET exhibits better linearity, higher current density and power density. A large signal equivalent circuit modeling for GaN FinFETs is presented in this paper. The improved Rs and current equation are shown in the paper. The simulation results of DC and S parameter models are compared with the measured ones. The results show that the model has high precision and good convergence and can be used in circuit design.