A Fully Integrated and High Linearity UWB LNA Implemented with Current-Reused Technique and Using Single-Biasing Voltage

Abstract

A fully integrated ultra-wideband (UWB) low-noise amplifier (LNA) operating in the 7.2-9.1 GHz frequency range is presented. The LNA is constructed in self-biased and current-reused configuration to eliminate the external supply voltage applied in gate to decrease the complexity of bias circuitry. A shunt-shunt feedback network is not only used to archive self-biased architecture and neutralize the miller effect, but also increase the linearity and bandwidth of the amplifier. A prototype was designed and fabricated in a TSMC 0.18-mum technology to demonstrate the proposed LNA circuit. The measurements of the prototype show the performances in the design band about 10 dB power gain, 3.9 dB noise figure, 2-dBm input-referred third-order intercept point (IIP3) and drawing 9 mA from a 1.8 V power supply.