Influence of mold compound type towards Palladium doped and copper doped 2N Au wire

Goh Chen Liew, Khoo Ju Lee, M. Aileen
{"title":"Influence of mold compound type towards Palladium doped and copper doped 2N Au wire","authors":"Goh Chen Liew, Khoo Ju Lee, M. Aileen","doi":"10.1109/EPTC.2014.7028404","DOIUrl":null,"url":null,"abstract":"In automotive semiconductor industry, the behaviour of gold (Au) wire is very crucial in sustaining the reliability performance of the product. Due to the motivation to achieve lifetime of high temperature storage (HTS) of 3000hr at 175°C, gold wire with 4N purity (99.99% Au) on AlCu pad cannot be used due to kirkendall voiding after thermal aging. This kirkendall voiding could lead to 1st bond failure during product application. The kirkendall void form when the Al or Au diffuses out of one region faster than the other can diffuse in from the other side of that region [1]. Therefore, 2N wire (99% Au) is recommended to replace 4N wire where the dopants in 2N wire (Pd, Cu, Pt) can limit the intermetallic layer growth and subsequently slows down the formation of kirkendall void. During the 2N wire pre-selection study, two wire types with different dopants, Palladium (Pd) and Copper (Cu) were selected. No failure was observed after HTS for unmolded unit. However, when molded unit were subjected to HTS, lifted bond was detected during ball shear after stress for Cu doped 2N wire. Based on above finding, it is indicated that there is influence of epoxy mold compound (EMC) toward the different dopant properties of 2N wire. Study by researcher [2] also shows that conventional epoxy mold compound do have influence towards the reliability behaviour, due to the presence of halides. In this paper, Pd doped and Cu doped 2N wire will be assessed using green EMC and non-green EMC. Wire Bond (WB) process characteristic (wire pull, ball shear, stress neck, cratering, IMC coverage and IMC growth) at 0hr will be examined. For critical responses such as ball shear and IMC growth, will also be examined after HTS. Investigation on Au-Al intermetallic phase will be performed to understand the diffusion behavior of 2 different dopant wires and a model will be constructed to explain the failure mechanism. This paper will present as a fundamental guideline to select the suitable dopant base for 2N Au wire type versus epoxy mold compound without compensating the reliability performance.","PeriodicalId":115713,"journal":{"name":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 16th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2014.7028404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In automotive semiconductor industry, the behaviour of gold (Au) wire is very crucial in sustaining the reliability performance of the product. Due to the motivation to achieve lifetime of high temperature storage (HTS) of 3000hr at 175°C, gold wire with 4N purity (99.99% Au) on AlCu pad cannot be used due to kirkendall voiding after thermal aging. This kirkendall voiding could lead to 1st bond failure during product application. The kirkendall void form when the Al or Au diffuses out of one region faster than the other can diffuse in from the other side of that region [1]. Therefore, 2N wire (99% Au) is recommended to replace 4N wire where the dopants in 2N wire (Pd, Cu, Pt) can limit the intermetallic layer growth and subsequently slows down the formation of kirkendall void. During the 2N wire pre-selection study, two wire types with different dopants, Palladium (Pd) and Copper (Cu) were selected. No failure was observed after HTS for unmolded unit. However, when molded unit were subjected to HTS, lifted bond was detected during ball shear after stress for Cu doped 2N wire. Based on above finding, it is indicated that there is influence of epoxy mold compound (EMC) toward the different dopant properties of 2N wire. Study by researcher [2] also shows that conventional epoxy mold compound do have influence towards the reliability behaviour, due to the presence of halides. In this paper, Pd doped and Cu doped 2N wire will be assessed using green EMC and non-green EMC. Wire Bond (WB) process characteristic (wire pull, ball shear, stress neck, cratering, IMC coverage and IMC growth) at 0hr will be examined. For critical responses such as ball shear and IMC growth, will also be examined after HTS. Investigation on Au-Al intermetallic phase will be performed to understand the diffusion behavior of 2 different dopant wires and a model will be constructed to explain the failure mechanism. This paper will present as a fundamental guideline to select the suitable dopant base for 2N Au wire type versus epoxy mold compound without compensating the reliability performance.
模具化合物类型对掺钯和掺铜2N金丝的影响
在汽车半导体工业中,金(Au)线的性能对维持产品的可靠性性能至关重要。由于在175℃下达到3000小时的高温储存寿命(HTS)的动机,在AlCu焊盘上具有4N纯度(99.99% Au)的金线在热老化后由于kirkendall空洞而不能使用。在产品应用过程中,这种kirkendall空洞可能导致第一次粘结失效。当Al或Au从一个区域扩散出去的速度比从该区域的另一侧扩散进来的速度快时,就会形成kirkendall空洞[1]。因此,推荐2N线(99% Au)代替4N线,因为2N线中的掺杂剂(Pd、Cu、Pt)可以限制金属间层的生长,从而减缓kirkendall空洞的形成。在2N线材预选研究中,选择了两种不同掺杂剂的线材:钯(Pd)和铜(Cu)。未成型单元在高温加热后未观察到任何故障。然而,当模制单元进行高温超导时,掺杂Cu的2N丝在应力后的球剪过程中发现了键的解除。在此基础上,指出了环氧模化合物(EMC)对2N线材掺杂性能的影响。研究者[2]的研究也表明,由于卤化物的存在,常规环氧树脂模具化合物确实对可靠性行为有影响。本文将用绿色电磁兼容和非绿色电磁兼容来评估掺杂Pd和掺杂Cu的2N线。将检查0小时时的线键合(WB)工艺特性(线拉、球剪、应力颈、弹坑、IMC覆盖和IMC增长)。对于临界响应,如球剪切和IMC增长,也将在高温高温后进行检查。通过对Au-Al金属间相的研究来了解两种不同掺杂金属丝的扩散行为,并建立模型来解释其失效机理。本文将为在不补偿可靠性性能的情况下,选择合适的2N金丝型与环氧模具复合材料的掺杂基提供基本指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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