Tunnel magnetoresistance enhancement in ferromagnetic tunnel junctions with ferromagnetic nano-particle layer insertion

H. Sukegawa, S. Nakamura, A. Hirohata, N. Tezuka, S. Sugimoto, K. Inomata
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引用次数: 0

Abstract

Coulomb blockade dominates the electron transport in an ultra-small double tunnel junction. Here, a helicon sputtering deposition system is used to fabricated Co/sub 90/Fe/sub 10//AlO/sub x//Co/sub 90/Fe/sub 10//AlO/sub x//Co/sub 90/Fe/sub 10/ MDTJs. The enhancement of TMR ratio within the Coulomb blockade regime. TMR curves across the MDTJs show a superparamagnetic behavior. It was also observed that the bias voltage dependence of the TMR becomes broader above 50 K, and the enhancement of the TMR around zero bias disappears at room temperature.
铁磁纳米粒子层的加入增强了铁磁隧道结的隧道磁阻
在超小型双隧道结中,库仑阻滞主导着电子输运。本文采用螺旋溅射沉积系统制备了Co/sub 90/Fe/sub 10//AlO/sub x//Co/sub 90/Fe/sub 10//AlO/sub x//Co/sub 90/Fe/sub 10/ MDTJs。库仑封锁区TMR比值的提高。跨MDTJs的TMR曲线表现出超顺磁性。在50 K以上,TMR的偏置电压依赖性变宽,在室温下,零偏置附近的TMR增强消失。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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