A microstructural analysis of thin film TiNiSn

D. Compton, A. Leitch, J. Neethling, V. V. Kozyrkov
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引用次数: 1

Abstract

This paper reports on a structural investigation of the ternary compound TiNiSn, prepared as a thin film by electron beam deposition of a sandwich structure comprising individual layers of Ti, Ni and Sn. The effect of annealing the compound at 800/spl deg/C for times up to 72 hours was investigated. X-ray diffraction revealed the formation of TiNi/sub 2/Sn after 6 hours of annealing. The excess of Ni in the deposited structure (confirmed by EDS) resulted in the first phase of TiNiSn not being present and a shift in the lattice parameter of second phase TiNi/sub 2/Sn.
tin薄膜的微观结构分析
本文报道了用电子束沉积由Ti、Ni和Sn组成的夹层结构制备三元化合物TiNiSn薄膜的结构研究。研究了在800/spl℃下退火72小时的效果。x射线衍射显示,退火6小时后形成了TiNi/sub 2/Sn。沉积结构中过量的Ni (EDS证实)导致TiNiSn的第一相不存在,而第二相TiNi/sub 2/Sn的晶格参数发生了移位。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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