{"title":"Base digital schemes on complementary bipolar transistors","authors":"N. Alimova, Z. Aripova, Sh. T. Toshmatov","doi":"10.1109/ICAICT.2010.5612004","DOIUrl":null,"url":null,"abstract":"A way to use the injection-voltaic mode of the bipolar transistor in order to create electronic switching cells (electronics keys), which are the basis of digital electronic elements, with power supply voltage of order of the contact potential difference is investigated.","PeriodicalId":314036,"journal":{"name":"2010 4th International Conference on Application of Information and Communication Technologies","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 4th International Conference on Application of Information and Communication Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAICT.2010.5612004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A way to use the injection-voltaic mode of the bipolar transistor in order to create electronic switching cells (electronics keys), which are the basis of digital electronic elements, with power supply voltage of order of the contact potential difference is investigated.