A comparative study between 4H-SiC and silicon power PiN diode having the same breakdown voltage 4KV

Abstract

The exploitation of silicon carbide semiconductor devices in power electronic field have made exceptional improvements by their fast switching and low dissipated losses especially at high operating temperatures, However, physical performances of silicon power components have reached their limits. This paper presents a comparative study, through numerical simulation and using the finite element method modeling, between 4H-SiC and silicon power PiN diode having the same breakdown voltage “4KV”. This comparative study highlights the benefits of silicon carbide.