Structure transformation of ZnO thin films properties influenced by substrate temperature deposited by magnetron sputtering

N. Sin, S. Ahmad, M. Musa, M. H. Mamat, M. Rusop
{"title":"Structure transformation of ZnO thin films properties influenced by substrate temperature deposited by magnetron sputtering","authors":"N. Sin, S. Ahmad, M. Musa, M. H. Mamat, M. Rusop","doi":"10.1109/SHUSER.2012.6269002","DOIUrl":null,"url":null,"abstract":"The structure transformation of ZnO thin films properties influenced by substrate temperature deposited by RF Magnetron Sputtering is presented. This project has been focused on electrical, optical and structural properties of ZnO thin films. The effect of variation substrate temperature at 200°C~500°C on the ZnO thin films have been investigated. The thin films were examined using two point probe current-voltage (I-V) measurement (Keithley 2400), UV-Vis-NIR spectrophotometer, field emmision scanning electron microscopy (FESEM) (JEOL JSM 7600F) and atomic force microscope (AFM) (Park System XE-100). ZnO thin films were prepared at 200 watt by a RF magnetron sputtering using ZnO target using glass as the substrate. The IV measurement indicated as the substrate temperature increase, the conductivity of ZnO thin film increase. All films have show high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). The root means square (rms) roughness for ZnO thin film were about (<;8nm) was measured using AFM. The image form FESEM observed that transformation of structure started to change at high temperature (400~500°C).","PeriodicalId":426671,"journal":{"name":"2012 IEEE Symposium on Humanities, Science and Engineering Research","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Symposium on Humanities, Science and Engineering Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SHUSER.2012.6269002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

The structure transformation of ZnO thin films properties influenced by substrate temperature deposited by RF Magnetron Sputtering is presented. This project has been focused on electrical, optical and structural properties of ZnO thin films. The effect of variation substrate temperature at 200°C~500°C on the ZnO thin films have been investigated. The thin films were examined using two point probe current-voltage (I-V) measurement (Keithley 2400), UV-Vis-NIR spectrophotometer, field emmision scanning electron microscopy (FESEM) (JEOL JSM 7600F) and atomic force microscope (AFM) (Park System XE-100). ZnO thin films were prepared at 200 watt by a RF magnetron sputtering using ZnO target using glass as the substrate. The IV measurement indicated as the substrate temperature increase, the conductivity of ZnO thin film increase. All films have show high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). The root means square (rms) roughness for ZnO thin film were about (<;8nm) was measured using AFM. The image form FESEM observed that transformation of structure started to change at high temperature (400~500°C).
磁控溅射沉积ZnO薄膜的结构转变及性能
研究了射频磁控溅射法制备ZnO薄膜的结构变化及其性能。本项目主要研究ZnO薄膜的电学、光学和结构特性。研究了衬底温度在200℃~500℃范围内变化对ZnO薄膜的影响。采用两点探针电流-电压(I-V)测量仪(Keithley 2400)、紫外-可见-近红外分光光度计、场发射扫描电镜(FESEM) (JEOL JSM 7600F)和原子力显微镜(AFM) (Park System xie -100)对薄膜进行检测。以ZnO为靶材,以玻璃为衬底,采用射频磁控溅射法制备了200瓦的ZnO薄膜。IV测量结果表明,随着衬底温度的升高,ZnO薄膜的电导率增大。用紫外可见分光光度计(JASCO 670)测定,所有薄膜均具有较高的紫外吸收性能。采用原子力显微镜测量ZnO薄膜的均方根粗糙度(rms)约为(< 8nm)。FESEM图像观察到,在高温(400~500℃)下,结构转变开始发生变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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