Sigyun Jeong, Heungjae Choi, Y. Jeong, J. Kenney, C. Kim
{"title":"High Efficiency Distributed Amplifier Using Optimum Transmission Line","authors":"Sigyun Jeong, Heungjae Choi, Y. Jeong, J. Kenney, C. Kim","doi":"10.1109/ECWT.2007.4404023","DOIUrl":null,"url":null,"abstract":"In this paper, we performed numerical analysis on reversed current of distributed amplifier (DA) based on transmission line theory and proposed optimum transmission line (OTL) to cancel reversed currents. This OTL has improved electrical performances of DA. The distributed amplifier using optimum transmission line (DAOTL) has been implemented with pHEMT transistor. Due to high capacitance of pHEMT, cutoff frequency is decided to 3.6 GHz. As a result of measurement, we could obtain maximum gain of 14.5 dB and minimum gain of 12.8 dB inner operation band. Moreover, we could PAE of 25.6% which is higher about 7.6% than the conventional DA (CDA) at 3 GHz. The output power was obtained 10.9 dBm which is higher about 1.7 dB than the conventional at 3 GHz.","PeriodicalId":448587,"journal":{"name":"2007 European Conference on Wireless Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Conference on Wireless Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECWT.2007.4404023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, we performed numerical analysis on reversed current of distributed amplifier (DA) based on transmission line theory and proposed optimum transmission line (OTL) to cancel reversed currents. This OTL has improved electrical performances of DA. The distributed amplifier using optimum transmission line (DAOTL) has been implemented with pHEMT transistor. Due to high capacitance of pHEMT, cutoff frequency is decided to 3.6 GHz. As a result of measurement, we could obtain maximum gain of 14.5 dB and minimum gain of 12.8 dB inner operation band. Moreover, we could PAE of 25.6% which is higher about 7.6% than the conventional DA (CDA) at 3 GHz. The output power was obtained 10.9 dBm which is higher about 1.7 dB than the conventional at 3 GHz.