GLACIER: a hot carrier gate level circuit characterization and simulation system for VLSI design

Lifeng Wu, Jingkun Fang, H. Yan, Ping Chen, A. Chen, Y. Okamoto, C. Yeh, Zhihong Liu, N. Iwanishi, N. Koike, H. Yonezawa, Y. Kawakami
{"title":"GLACIER: a hot carrier gate level circuit characterization and simulation system for VLSI design","authors":"Lifeng Wu, Jingkun Fang, H. Yan, Ping Chen, A. Chen, Y. Okamoto, C. Yeh, Zhihong Liu, N. Iwanishi, N. Koike, H. Yonezawa, Y. Kawakami","doi":"10.1109/ISQED.2000.838857","DOIUrl":null,"url":null,"abstract":"Gate level circuit simulation on hot carrier degradation is introduced for the first time by the GLACIER system presented in this paper. The inherent advantages such as high speed and high capacity of the gate level simulation as compared to the traditional transistor level hot carrier simulation makes the design-in reliability simulation possible and practical for the deep submicron VLSI circuit designs with millions of transistors. By virtue of a unique ratio based modeling technique, GLACIER system provides a very high accuracy which is mostly within 1% difference of transistor level hot carrier simulation.","PeriodicalId":113766,"journal":{"name":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE 2000 First International Symposium on Quality Electronic Design (Cat. No. PR00525)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2000.838857","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27

Abstract

Gate level circuit simulation on hot carrier degradation is introduced for the first time by the GLACIER system presented in this paper. The inherent advantages such as high speed and high capacity of the gate level simulation as compared to the traditional transistor level hot carrier simulation makes the design-in reliability simulation possible and practical for the deep submicron VLSI circuit designs with millions of transistors. By virtue of a unique ratio based modeling technique, GLACIER system provides a very high accuracy which is mostly within 1% difference of transistor level hot carrier simulation.
冰川:热载流子门电平电路表征和仿真系统的超大规模集成电路设计
本文首次采用GLACIER系统对热载流子退化进行门级电路仿真。门级仿真与传统晶体管级热载流子仿真相比,具有速度快、容量大等固有优势,这使得设计可靠性仿真在数百万晶体管的深亚微米VLSI电路设计中成为可能和实用。凭借独特的基于比率的建模技术,GLACIER系统提供了非常高的精度,其精度在晶体管级热载流子模拟的1%以内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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