BSIM3 MOSFET model accuracy for RF circuit simulation

Abstract

The accuracy of the BSIM3 MOSFET model for small-signal RF circuit simulation has been investigated for a 0.5 /spl mu/m CMOS process. Comparisons of the small signal y and s parameters for different bias conditions and channel lengths show that BSIM3 is reasonably well suited for small-signal analyses from 100 kHz up to 10 GHz.