CMOS standard cells characterization for defect based testing

W. Pleskacz, D. Kasprowicz, Tomasz Oleszczak, W. Kuzmicz
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引用次数: 31

Abstract

This paper extends the CMOS standard cells characterization methodology for defect based testing. The proposed methodology allows to find the types of faults which may occur in a real IC, to determine their probabilities, and to find the input test vectors which detect these faults. For shorts at the inputs two types of cell simulation conditions - "Wired-AND" and "Wired-OR" are used. Examples of industrial standard cells characterization indicate that a single logic fault probability table is not sufficient. Separate tables for " Wired-AND " and " Wired-OR" conditions at the inputs are needed for full characterization and hierarchical test generation.
基于缺陷测试的CMOS标准电池特性
本文扩展了CMOS标准电池的缺陷检测方法。所提出的方法允许找到在实际集成电路中可能发生的故障类型,确定其概率,并找到检测这些故障的输入测试向量。对于输入端的短路,使用两种类型的单元模拟条件-“有线与”和“有线或”。工业标准细胞表征的例子表明,单一的逻辑故障概率表是不够的。需要在输入处为“有线与”和“有线或”条件单独的表,以进行完整的表征和分层测试生成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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