Performance analysis of transistor-based circuits through TAMAMS Web: From bulk to molecular devices

Izhar Hussain, F. Riente, M. R. Roch, G. Piccinini, M. Graziano
{"title":"Performance analysis of transistor-based circuits through TAMAMS Web: From bulk to molecular devices","authors":"Izhar Hussain, F. Riente, M. R. Roch, G. Piccinini, M. Graziano","doi":"10.1109/ICEDSA.2016.7818549","DOIUrl":null,"url":null,"abstract":"To meet the challenges associated with transistor scaling and short channel devices, the structure of MOS devices has undergone an incredible evolution. From Bulk devices, technology has shifted through Silicon-On-Insulator (SOI) devices, reaching now FinFET transistors, the next steps in the evolutionary path are represented by Gate-All-Around (GAA) and Molecular Transistors. Using analytical compact models for standard (BULK, SOI, FinFET) and emerging devices (GAA, Molecular FET (MOLFET)), it is possible to predict the system level performance of future NANO electronic circuits. In this work, we show how circuit's performance can be predicted and analyzed at system level using our tool, TAMTAMS Web. Starting from Bulk transistors down to a nanometer scale Molecular FET, TAMTAMS Web incorporates models to analyze device quantities (Drive current, Subthresold current…) up to system level. We have developed a compact model of Virtex 4 FPGA CLB block that is used as benchmark. The work here presented not only highlights the potentialities of TAMTAMS, but it also provides useful hints on the evolution of transistor based technology.","PeriodicalId":247318,"journal":{"name":"2016 5th International Conference on Electronic Devices, Systems and Applications (ICEDSA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Conference on Electronic Devices, Systems and Applications (ICEDSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEDSA.2016.7818549","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

To meet the challenges associated with transistor scaling and short channel devices, the structure of MOS devices has undergone an incredible evolution. From Bulk devices, technology has shifted through Silicon-On-Insulator (SOI) devices, reaching now FinFET transistors, the next steps in the evolutionary path are represented by Gate-All-Around (GAA) and Molecular Transistors. Using analytical compact models for standard (BULK, SOI, FinFET) and emerging devices (GAA, Molecular FET (MOLFET)), it is possible to predict the system level performance of future NANO electronic circuits. In this work, we show how circuit's performance can be predicted and analyzed at system level using our tool, TAMTAMS Web. Starting from Bulk transistors down to a nanometer scale Molecular FET, TAMTAMS Web incorporates models to analyze device quantities (Drive current, Subthresold current…) up to system level. We have developed a compact model of Virtex 4 FPGA CLB block that is used as benchmark. The work here presented not only highlights the potentialities of TAMTAMS, but it also provides useful hints on the evolution of transistor based technology.
通过TAMAMS网络进行晶体管电路的性能分析:从体积器件到分子器件
为了应对与晶体管缩放和短沟道器件相关的挑战,MOS器件的结构经历了令人难以置信的发展。从体器件开始,技术已经通过绝缘体上硅(SOI)器件转移到现在的FinFET晶体管,进化路径的下一步是栅极全能(GAA)和分子晶体管。使用标准(BULK, SOI, FinFET)和新兴器件(GAA, Molecular FET (MOLFET))的分析紧凑模型,可以预测未来纳米电子电路的系统级性能。在这项工作中,我们展示了如何使用我们的工具TAMTAMS Web在系统级预测和分析电路的性能。从体积晶体管到纳米尺度的分子场效应管,TAMTAMS Web包含模型来分析器件数量(驱动电流,亚阈值电流…)直到系统级。我们开发了一个紧凑的Virtex 4 FPGA CLB模块模型作为基准。这里提出的工作不仅突出了TAMTAMS的潜力,而且还为基于晶体管的技术的发展提供了有用的提示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信