Heterogenous Integration of Silicon Ion Trap and Glass Interposer for Scalable Quantum Computing Enabled by TSV, Micro-bumps and RDL

P. Zhao, Hong Yu Li, J. Tao, Y. Lim, W. Seit, L. Guidoni, C. S. Tan
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引用次数: 1

Abstract

In this work, we report the heterogenous integration of ion trap on silicon assembled on glass interposer, where TSV, micro-bumps and redistribution layer are implemented and allow for ion trap design with significantly high flexibility. CMOS-compatible back-end-of-line process is employed on 300 mm silicon/glass wafer platform. Due to the incorporation of TSVs into ion trap design, the footprint of ion trap is reduced. Correspondingly, low parasitic capacitance (3 pF) and RF loss (insertion loss of −0.1 dB at frequency of 50 MHz) are achieved, presenting significant improvement than conventional trap that uses wire bonding as interconnections. The trap with reduced footprint also enables small-beam laser addressing. The obtained ion lifetime and heating rate are comparable with traps of similar dimension that operated in room temperature. Two solutions to mitigate trap heating issue are proposed. This heterogenous integrated ion trap is an important building block for scalable quantum information processing based on ion trap device.
基于TSV、微碰撞和RDL实现可扩展量子计算的硅离子阱和玻璃中间层异质集成
在这项工作中,我们报道了组装在玻璃中间层上的硅离子阱的异质集成,其中实现了TSV,微凸起和再分配层,并允许离子阱设计具有很高的灵活性。在300mm硅/玻璃晶圆平台上采用cmos兼容后端工艺。由于在离子阱设计中加入了tsv,离子阱的占地面积减小了。相应地,实现了低寄生电容(3pf)和RF损耗(在50 MHz频率下的插入损耗为- 0.1 dB),比使用线键合作为互连的传统陷阱有显著改进。占地面积减少的陷阱也可以实现小光束激光寻址。所获得的离子寿命和加热速率与在室温下操作的类似尺寸的捕集器相当。提出了两种解决捕集器加热问题的方法。这种异质集成离子阱是基于离子阱器件的可扩展量子信息处理的重要组成部分。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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