Heterojunction Tunnel Field Effect Transistors – A Detailed Review

Abstract

Tunnel FET(TFET) can provide ultra-low quiescent (~pA) current. Some of the essential parameters for determining the characteristics of TFET are high ION current, constrained Subthreshold slope value, and reduced ambipolar leakage. TFET experiences a sub-threshold decrease of less than 60mV/decade in the process of the sub-threshold slope and hence higher transconductance per bias current than MOSFET. This article would be beneficial to get a review of various device structures and their performances of Tunnel FET. In this paper, we examined the multiple TFET device structures and compared their performances for attaining the desired ION/IOFF.