Characterization of GaAs(001) step-terraced morphology formation

Abstract

Step-terraced morphology formation of a crystal surface is described by means of two-dimensional autocorrelation functions and Fourier transforms of the surface relief and by the full length of monatomic steps. This approach is applied for characterization of thermal smoothing kinetics of GaAs(001) “epi-ready” substrates in the conditions close to equilibrium between the surface and gallium and arsenic vapors.