A 60dB gain and 4dB noise figure CMOS V-band receiver based on two-dimensional passive Gm-enhancement

Abstract

A direct conversion receiver which consists of low noise amplifier (LNA), mixer and programmable gain amplifier (PGA) for V-band (60GHz) applications is designed and realized in 65nm CMOS. A novel two-dimensional passive gm-enhancement technique is devised to boost the conversion gain and lower the Noise Figure (NF) with insignificant power overhead. An overall minimum SSB NF of 3.9dB and a maximum power conversion gain of 60dB have been validated from such fabricated receiver that occupies core silicon area of 0.2mm2 and draws 34mA from 1V supply.