Comparative Study of High K in Silicon Nano Tube FET for Switching Applications

Abstract

In this work we have studied the impact of variation of k dielectric constant on Silicon Nano Tube FET for low power and high speed applications. The Silicon Nano tubular structure offers better immunity towards short channel effects (SCE‘s) because of the better control of channel region due to the double gate all around. By cause of gate engineered structure high K value structures possess high value of electron velocity as compare to low k dielectric structure, which helps in improving the efficiency of carrier transport. In this work we have considered a Silicon Di-oxide(SiO2), Silicon Nitride(Si3N4), Hafnium Oxide(HfO2), Hafnium Silicate (HfSiO4), Tin oxide (SnO2) and Titanium Oxide (TO2) as a gate dielectric. It has been found that when the high k is replaced with SiO2 then the switching performance of the device is enhanced which makes it suitable for the SOC applications. From the analysis it has been found that HFO2 in SINTFET will be a superior alternative for future tubular FET devices