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Investigation of the Characteristics of High-Power E-mode GaN Power Semiconductor by Plasma Process

Journal of the Institute of Electronics Engineers of Korea Pub Date : 2021-03-31 DOI:10.5573/IEIE.2021.58.3.43
Hwan-Hee-Chan Choi, Gyeol Ahn, T. Jang, K. Shim
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等离子体工艺制备大功率e模GaN功率半导体的特性研究
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Journal of the Institute of Electronics Engineers of Korea
Journal of the Institute of Electronics Engineers of Korea
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