Evaluation of the Ionization and Recombination Processes in Low-Density Plasma Based on the Statistical Model of Atom

S. Garanin, E. M. Palagina
{"title":"Evaluation of the Ionization and Recombination Processes in Low-Density Plasma Based on the Statistical Model of Atom","authors":"S. Garanin, E. M. Palagina","doi":"10.1109/PPPS.2007.4345445","DOIUrl":null,"url":null,"abstract":"Summary form only given. The issue of plasma irradiation on impurities is very important for the MAGO/MTF approach as it provides considerable contribution to plasma cooling. The density of the MACK VMTF plasma is rather low, therefore the radiation processes can be considered in the coronal limit. If we are interested in radiation on heavy impurities with big number of electrons, the statistical approach can be used for the plasma-electron interaction kinetics description (and, accordingly, the radiation occurring at such interaction). The discrete transitions and lines in this approach are taken into account statistically and on the average. In this paper, the ionization and recombination processes proceeding in plasma in free electrons-ions collisions are considered basing on the atom statistical model. The ionization and recombination processes can be presented in this approximation as the process of binary collisions of electrons in the atomic electron gas. The expression for the ionization rate depending on the ionization potential / and temperature T is obtained. This formula shows that at 1>> T the ionization rate is proportional to exp(-I/T). In the proposed approach, the recombination rate is calculated for an ion with high nuclear charge Z, and at arbitrary Z the recombination rate is estimated. The obtained values of the ionization and recombination rates are in reasonable agreement with available experimental data. The considered model explains low coronal model values of I/T , as compared with the Saha equation, and the reduction of these values with the growth of Z. The values I/T and the mean ion charge obtained from the balance equation for multi-electron ions using one fitting coefficient agree with the tabular data obtained in the multi-level coronal model. The obtained results can be applied not only to the MAGO/MTF plasma but also to the systems with magnetic plasma confinement and to low densitv cosmic plasma.","PeriodicalId":446230,"journal":{"name":"2007 IEEE 34th International Conference on Plasma Science (ICOPS)","volume":"05 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 34th International Conference on Plasma Science (ICOPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPPS.2007.4345445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Summary form only given. The issue of plasma irradiation on impurities is very important for the MAGO/MTF approach as it provides considerable contribution to plasma cooling. The density of the MACK VMTF plasma is rather low, therefore the radiation processes can be considered in the coronal limit. If we are interested in radiation on heavy impurities with big number of electrons, the statistical approach can be used for the plasma-electron interaction kinetics description (and, accordingly, the radiation occurring at such interaction). The discrete transitions and lines in this approach are taken into account statistically and on the average. In this paper, the ionization and recombination processes proceeding in plasma in free electrons-ions collisions are considered basing on the atom statistical model. The ionization and recombination processes can be presented in this approximation as the process of binary collisions of electrons in the atomic electron gas. The expression for the ionization rate depending on the ionization potential / and temperature T is obtained. This formula shows that at 1>> T the ionization rate is proportional to exp(-I/T). In the proposed approach, the recombination rate is calculated for an ion with high nuclear charge Z, and at arbitrary Z the recombination rate is estimated. The obtained values of the ionization and recombination rates are in reasonable agreement with available experimental data. The considered model explains low coronal model values of I/T , as compared with the Saha equation, and the reduction of these values with the growth of Z. The values I/T and the mean ion charge obtained from the balance equation for multi-electron ions using one fitting coefficient agree with the tabular data obtained in the multi-level coronal model. The obtained results can be applied not only to the MAGO/MTF plasma but also to the systems with magnetic plasma confinement and to low densitv cosmic plasma.
基于原子统计模型的低密度等离子体电离和复合过程评价
只提供摘要形式。等离子体辐照杂质的问题对于MAGO/MTF方法非常重要,因为它对等离子体冷却有很大的贡献。MACK VMTF等离子体的密度很低,因此可以认为其辐射过程处于日冕极限。如果我们对具有大量电子的重杂质的辐射感兴趣,则可以使用统计方法来描述等离子体-电子相互作用动力学(以及相应地,在这种相互作用中发生的辐射)。在这种方法中,离散的过渡和线被统计地和平均地考虑在内。本文基于原子统计模型,考虑了等离子体中自由电子-离子碰撞的电离和复合过程。在这个近似中,电离和复合过程可以表示为原子电子气体中电子的二元碰撞过程。得到了电离速率随电离势/和温度T的表达式。由公式可知,在1>> T时,电离速率与exp(-I/T)成正比。在该方法中,计算了高核电荷Z离子的复合速率,并对任意Z离子的复合速率进行了估计。所得的电离率和复合率与现有实验数据基本一致。与Saha方程相比,所考虑的模型解释了日冕模型中较低的I/T值,以及这些值随着z的增长而减小。用一个拟合系数从多电子离子平衡方程中得到的I/T值和平均离子电荷与多层次日冕模型中得到的表格数据一致。所得结果不仅适用于MAGO/MTF等离子体,也适用于磁等离子体约束系统和低密度宇宙等离子体。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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