I-V characteristics of n-Si /ZnO/Se/MWCNTs nanocomposite solar cell fabricated by solvothermal technique

Abstract

I-V Characteristics of n-Si/ZnO/Se/MWCNTs nanocomposite solar cell fabricated by solvothermal technique were investigated, deals with the fabrication of heterojunction solar cell was by deposited ZnO-Se-MWCNTs nanocomposite on the n-Si substrate using Pulsed Laser Deposition technique. FE-SEM images show that the diameters of the prepared MWCNTs is up to several micrometers in length and also some of ZnO and Se NPs were closely linked to the surface of MWCNTs. So, the diameter of the coated MWCNTs was increased as a result. XRD shows that the prepared ZnO-Se-MWCNTs nanocomposite has a homogeneous structure with average crystallite sizes (30.86-56) nm. UV-Vis. Spectra show enhancement of absorption for ZnO-Se-MWCNTs nanocomposite material in comparison with MWCNTs. The characteristics of current-voltage heterojunction showed that the forward bias current change nearly exponentially with the applied voltage in dark and this is consistent with tunneling –recombination model. The fill factor of the fabricated n-Si/ZnO/Se/MWCNTs nanocomposite solar cell was 50 %, while the efficiency η was 7 under illumination.I-V Characteristics of n-Si/ZnO/Se/MWCNTs nanocomposite solar cell fabricated by solvothermal technique were investigated, deals with the fabrication of heterojunction solar cell was by deposited ZnO-Se-MWCNTs nanocomposite on the n-Si substrate using Pulsed Laser Deposition technique. FE-SEM images show that the diameters of the prepared MWCNTs is up to several micrometers in length and also some of ZnO and Se NPs were closely linked to the surface of MWCNTs. So, the diameter of the coated MWCNTs was increased as a result. XRD shows that the prepared ZnO-Se-MWCNTs nanocomposite has a homogeneous structure with average crystallite sizes (30.86-56) nm. UV-Vis. Spectra show enhancement of absorption for ZnO-Se-MWCNTs nanocomposite material in comparison with MWCNTs. The characteristics of current-voltage heterojunction showed that the forward bias current change nearly exponentially with the applied voltage in dark and this is consistent with tunneling –recombination model. The fill factor of the fabricated...