Non-destructive extraction of structural parameters of fully-depleted SOI MOSFETs using subthreshold slope characteristics

Abstract

In this paper we focus on non-destructive extraction method for the structural parameters of FD SOI MOSFETs using S-factor characteristics. We develop a simulator based on a one-dimensional model of the SOI MOSFET for analyzing the back gate characteristics. Parameters extracted by this method are in good agreement with parameters obtained from TEM observation. We evaluate results of this method by analyzing fitting errors and discuss its accuracy.