Low-current probabilistic writes for power-efficient STT-RAM caches

Nikolaos Strikos, Vasileios Kontorinis, Xiangyu Dong, H. Homayoun, D. Tullsen
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引用次数: 15

Abstract

MRAM has emerged as one of the most attractive non-volatile solutions due to fast read access, low leakage power, high bit density, and long endurance. However, the high power consumption of write operations remains a barrier to the commercial adoption of MRAM technology. This paper addresses this problem by introducing low-current probabilistic writes (LCPW), a technique that reduces write access energy by lowering the amplitude of the write current pulse. Although low current pulses no longer guarantee successful bit write operations, we propose and evaluate a simple technique to ensure correctness and achieve significant power reduction over a typical MRAM implementation.
低电流概率写入节能STT-RAM缓存
由于快速读取、低泄漏功率、高比特密度和长寿命,MRAM已成为最具吸引力的非易失性解决方案之一。然而,写入操作的高功耗仍然是MRAM技术商业应用的障碍。本文通过引入低电流概率写入(LCPW)来解决这个问题,LCPW是一种通过降低写入电流脉冲幅度来减少写入访问能量的技术。虽然低电流脉冲不再保证成功的比特写入操作,但我们提出并评估了一种简单的技术,以确保正确性,并在典型的MRAM实现中实现显著的功耗降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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