On-Chip Assessment of Scattering in the Response of Si-Based Microdevices

A. Ghisi, S. Mariani
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Abstract

The response of micromachines to the external actions is typically affected by a scattering, which is on its own induced by their microstructure and by stages of the microfabrication process. The progressive reduction in size of the mechanical components, forced by a path towards (further) miniaturization, has recently enhanced the outcomes of the aforementioned scattering, and provided a burst in research activities to address issues linked to its assessment [1,2]. In this work, we discuss the features of an on-chip testing device that we purposely designed to efficiently estimate the two major sources of scattering affecting inertial, polysilicon-based micromachines: the morphology of the silicon film constituting the movable parts of the device, and the etch defect or overetch induced by microfabrication. The coupled electro-mechanical behavior of the statically determinate movable (micro)structure of the on-chip device has been modelled via beam bending theory [3], within which the aforementioned sources of scattering have been accounted for through local fluctuating fields in the compliant part of the structure itself, namely the supporting spring. The proposed stochastic model is shown to outperform former ones available in the literature [4,5], which neglected the simultaneous and interacting effects of the two mentioned sources on the measure response. The model can fully catch the scattering in the C-V plots up to pull-in, hence also in the nonlinear working regime of the device. References [1] Zhu, J.; Liu, X.; Shi, Q.; He, T.; Sun, Z.; Guo, X.; Liu, W.; Sulaiman, O.B.; Dong, B.; Lee, C. Development Trends and Perspectives of Future Sensors and MEMS/NEMS. Micromachines 2020, 11. [2] Molina, J.P.Q.; Rosafalco, L.; Mariani, S. Stochastic Mechanical Characterization of Polysilicon MEMS: A Deep Learning Approach. Proceedings 2020, 42. [3] Mirzazadeh, R.; Eftekhar Azam, S.; Mariani, S. Micromechanical Characterization of Polysilicon Films through On-Chip Tests. Sensors 2016, 16, 1191. [4] Mirzazadeh, R.; Ghisi, A.; Mariani, S. Statistical Investigation of the Mechanical and Geometrical Properties of Polysilicon Films through On-Chip Tests. Micromachines 2018, 9, 53. [5] Ghisi, A.; Mariani, S. Effect of imperfections due to material heterogeneity on the offset of polysilicon MEMS structures. Sensors 2019, 19, 3256.
硅基微器件响应中散射的片上评估
微机械对外部作用的响应通常受到散射的影响,而散射本身是由微机械的微观结构和微加工过程的各个阶段引起的。机械部件的尺寸逐渐减小,受到(进一步)小型化道路的推动,最近增强了上述散射的结果,并提供了一个研究活动的爆发,以解决与其评估相关的问题[1,2]。在这项工作中,我们讨论了一个片上测试装置的特点,我们有意设计它来有效地估计影响惯性多晶硅基微机械的两个主要散射源:构成器件可移动部件的硅膜的形态,以及由微加工引起的蚀刻缺陷或过蚀刻。通过光束弯曲理论[3]对片上器件的静定可动(微)结构的耦合机电行为进行了建模,其中通过结构本身的柔性部分(即支撑弹簧)的局部波动场解释了上述散射源。本文提出的随机模型优于文献[4,5]中已有的随机模型,后者忽略了上述两种源对测量响应的同时和相互作用影响。该模型可以完全捕捉到在拉入前的C-V区域的散射,因此也可以捕捉到器件的非线性工作状态。参考文献[j];刘,x;施,问:;他,t;太阳,z;郭,x;刘,w;Sulaiman交锋;盾,b;未来传感器与MEMS/NEMS的发展趋势与展望。微机械2020,11。[2]莫利纳,J.P.Q.;Rosafalco l;多晶硅MEMS的随机力学表征:一种深度学习方法。学报,2020,42。[3] Mirzazadeh r;埃夫特哈尔·阿扎姆,s;芯片上测试多晶硅薄膜的微力学特性。传感器,2016,16,1191。[4] Mirzazadeh r;Ghisi, a;通过片上测试对多晶硅薄膜力学和几何特性的统计研究。微机械,2018,9,53。[5] Ghisi, a;材料非均质性对多晶硅MEMS结构偏移的影响。传感器,2019,19,3256。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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