DfT optimization for pre-bond testing of 3D-SICs containing TSVs

Jia Li, D. Xiang
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引用次数: 22

Abstract

This paper proposes to provide testability for the breaking point produced by the Through-Silicon-Vias (TSVs) of 3D-Stacked ICs (3D-SICs) during pre-bond testing with low Design-for-Testability (DfT) cost. Different from prior solutions which utilize two additional wrapper cells for the breaking point at each TSV, this paper proposes to provide the testability of two ends of the TSVs respectively by reusing the existing Primary-Inputs (PIs)/ Primary-Outputs (POs) and Pseudo-PIs/Pseudo- POs (PPIs/PPOs). To further reduce the hardware overhead and enhance the efficiency of the proposed method, this paper has also proposed the metrics and algorithm on deciding the selecting order of the TSVs and the PIs/PPIs (POs/PPOs) to be reused. The experimental results on larger ITC'99 benchmark circuits validate the effectiveness of the proposed method.
含tsv的3d - sic粘结前测试的DfT优化
本文提出了在键前测试过程中为3d堆叠集成电路(3d - sic)的通硅通孔(tsv)产生的断点提供可测试性,并且具有低可测试性设计(DfT)成本。与以往的解决方案不同的是,在每个TSV上使用两个额外的包装单元作为断点,本文提出通过重用现有的初级输入(pi)/初级输出(POs)和伪pi /伪POs (ppi /PPOs)来分别提供TSV两端的可测试性。为了进一步降低硬件开销,提高方法的效率,本文还提出了确定tsv和可重用的pi /PPIs (POs/PPOs)的选择顺序的度量和算法。在较大的ITC’99基准电路上的实验结果验证了该方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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