J. Moon, D. Wong, M. Antcliffe, P. Hashimoto, M. Hu, P. Willadsen, M. Micovic, H. Moyer, A. Kurdoghlian, P. Macdonald, M. Wetzel, R. Bowen
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引用次数: 14
Abstract
This work represents state-of-the-art performances of both large gateperiphery discrete GaN HEMTs devices and its application toward GaN MMICs amplifiers with state-of-the-art performances in simultaneous output power, PAE, and MMIC power density
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