I. Cho, B. Lim, J. Kim, S.S. Kim, K. Kim, B.J. Lee, G. Bae, N. Lee, S.H. Kim, K. Koh, H. Kang, M. Seo, S.W. Kim, S.H. Hwang, D.Y. Lee, M.C. Kim, S. Chae, S. Seo, C.W. Kim
{"title":"Full integration and characterization of Localized ONO Memory (LONOM) for embedded flash technology","authors":"I. Cho, B. Lim, J. Kim, S.S. Kim, K. Kim, B.J. Lee, G. Bae, N. Lee, S.H. Kim, K. Koh, H. Kang, M. Seo, S.W. Kim, S.H. Hwang, D.Y. Lee, M.C. Kim, S. Chae, S. Seo, C.W. Kim","doi":"10.1109/VLSIT.2004.1345502","DOIUrl":null,"url":null,"abstract":"We have successfully integrated 8M bits Localized ONO Memory (LONOM) for the embedded nonvolatile memory using 0.13um standard logic process with 5-level Cu metallization. which has a small cell size of 0.276UM and the simplest cell array structure. Without any special algorithm, the localized storage layer of the LONOM can satisfy the essential features for an embedded memory solution, such as low program current. disturb-free read operation and good endurance characteristics. The read speed is as high as 60MHz at V/sub cc/=0.9V, 85/spl deg/C and the current consumption is lower than 5mA at Vcc = 1.4V.","PeriodicalId":297052,"journal":{"name":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2004.1345502","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We have successfully integrated 8M bits Localized ONO Memory (LONOM) for the embedded nonvolatile memory using 0.13um standard logic process with 5-level Cu metallization. which has a small cell size of 0.276UM and the simplest cell array structure. Without any special algorithm, the localized storage layer of the LONOM can satisfy the essential features for an embedded memory solution, such as low program current. disturb-free read operation and good endurance characteristics. The read speed is as high as 60MHz at V/sub cc/=0.9V, 85/spl deg/C and the current consumption is lower than 5mA at Vcc = 1.4V.
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